Ukrainian Journal of Physical Optics


2026 Volume 27, Issue 2


ISSN 1816-2002 (Online), ISSN 1609-1833 (Print)

EFFECT OF YTTRIUM DOPING ON THE ELECTRONIC ENERGY STRUCTURE AND OPTICAL PROPERTIES OF GaAs

Ilchuk, H. A., Kushnir, O. S., Semkiv, I. V., Krukovskyi, S. I., Andriyevsky, B. and Kashuba, A. I.

Author Information
1Ilchuk, H. A. ORCID logo SCOPUS logo, 2Kushnir, O. S. ORCID logo SCOPUS logo, 1Semkiv, I. V. ORCID logo SCOPUS logo, 1,3Krukovskyi, S. I. SCOPUS logo, 4Andriyevsky, B. ORCID logo SCOPUS logo, 1*Kashuba, A. I. ORCID logo SCOPUS logo
1Department of General Physics, Lviv Polytechnic National University, 12 Bandera Street, 79046 Lviv, Ukraine
2Department of Optoelectronics and Information Technologies, Ivan Franko National University of Lviv, 107 Tarnavsky Street, 79017 Lviv, Ukraine
3Scientific Research Company ‘Electron-Carat’, 202 Stryiska Street, 79031 Lviv, Ukraine
4Faculty of Electronics and Computer Sciences, Koszalin University of Technology, Śniadeckich Street, 75453 Koszalin, Poland
*Corresponding author: andrii.i.kashuba@lpnu.ua

ABSTRACT

We report the results for the electronic energy structure of Y-doped GaAs (Ga1–xYxAs). Its electronic energy spectrum is calculated within the framework of density functional theory. The concentration dependences of the main energy, optical, and structural properties are obtained for a number of yttrium concentrations in the region x = 0÷0.25. The energy band dispersion and the density of states of these materials are analyzed. Based on the electronic energy spectrum, the real and imaginary components of the dielectric function are calculated. Using the Kramers–Kronig relations, we also derive such fundamental optical functions of Ga1–xYxAs as the refractive index n, the extinction coefficient k, and the absorption coefficient α.

Keywords: GaAs, electron energy structure, density of states, band gap, refractive index, optical dielectric function

UDC: 681.7.068

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    Представлено результати дослідження електронної енергетичної структури GaAs, легованого Y (Ga1–xYxAs). Його електронний енергетичний спектр розраховано в рамках теорії функціоналу густини. Концентраційні залежності основних енергетичних, структурних і оптичних властивостей Ga1–xYxAs встановлено для деяких концентрацій Y у діапазоні x = 0÷0,25. Проведено аналіз дисперсії енергетичних зон і густини станів цих матеріалів. На основі електронного енергетичного спектру розраховано дійсну та уявну складові діелектричної функції. Використовуючи співвідношення Крамерса–Кроніга, одержано фундаментальні оптичні функції, такі як показник заломлення n, коефіцієнт екстинкції k і коефіцієнт поглинання α.

    Ключові слова: GaAs, електронна енергетична структура, густина станів, заборонена зона, показник заломлення, оптична діелектрична функція

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