Ukrainian Journal of Physical Optics


2026 Volume 27, Issue 1


ISSN 1816-2002 (Online), ISSN 1609-1833 (Print)

PHOTOCHROMISM OF DOPED Bi12SiO20 CRYSTALS

Т. V. Panchenko, M. P. Trubitsyn and V. Laguta

Author Information
1 *Т. V. Panchenko SCOPUS logo, 1,2M. P. Trubitsyn ORCID logo SCOPUS logo, 2,3V. Laguta ORCID logo SCOPUS logo
1Research Institute for Energy Efficient Technologies and Materials Sciences, Oles Honchar Dnipro National University, Science Ave., 72, Dnipro, 49010, Ukraine
2Institute of Physics of the Czech Academy of Sciences, Na Slovance 1999/2, 182 00 Prague 8, Czech Republic
3Frantsevich Institute for Problems of Materials Science, NAS Ukraine, Omelyan Pritsak str. 3, Kyiv, 03142, Ukraine
*Corresponding author: panchtv141@gmail.com

ABSTRACT

In the spectral range of 0.5–3.5 eV, both stationary and photoinduced optical absorption, as well as stationary and photoinduced photoconductivity, were studied in Bi12SiO20 single crystals doped with non-transition metal ions (Al, Ga, Sn) and transition metal ions (Fe, Cr, Cu, Mn, V, Ag, Mo). It was found that transition metal ions create deep localized centers. In this case, the photochromic effect is controlled by intracenter transitions in those ions whose concentration rises due to photochemical reactions. In crystals doped with non-transition metal ions, the photochromic effect is driven by the redistribution of charge carriers among local levels within the band gap, whose structure is altered by the dopants. In both cases, photoinduced photoconductivity mainly depends on changes in the distribution of carrier recombination currents between fast and slow recombination centers. The possible correlation between the photochromic effect and photoinduced photoconductivity is discussed.

Keywords: Bi12SiO20 doped crystals, absorption spectra, photochromic effect, induced photoconductivity

UDC: 535.33

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    У спектральному діапазоні 0,5–3,5 еV досліджено стаціонарне та фотоіндуковане оптичне поглинання, а також стаціонарну та фотоіндуковану фотопровідність у монокристалах Bi12SiO20, легованих іонами неперехідних Al, Ga, Sn) і перехідних металів (Fe, Cr, Cu, Mn, V, Ag, Mo). Показано, що іони перехідних металів створюють глибокі локалізовані центри. При цьому фотохромний ефект визначається внутрішньоцентровими переходами в тих іонах, концентрація яких збільшується внаслідок фотохімічних реакцій. У кристалах з іонами неперехідних металів фотохромний ефект залежить від розподілу носіїв заряду по локальних рівнях забороненої зони, структура яких змінена цими іонами. В обох випадках фотоіндукована фотопровідність визначається, в основному, зміною розподілу рекомбінаційних потоків носіїв заряду між центрами швидкої та повільної рекомбінації. Аналізується можливість взаємозв'язку між фотохромним ефектом і фотоіндукованою фотопровідністю.

    Ключові слова: леговані кристали Bi12SiO20, спектри поглинання, фотохромний ефект, індукована фотопровідність

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