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Spin polarization of dilute
magnetic semiconductors under optical excitation of impurity levels
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Gorley P.M., Mysliuk O.M., Vieira M., Horley
P.P., Dugaev V.K. and Barnas J.
We use the method based on kinetic equations to analyze the influence
of inten-sity and polarization of incident light, concentration of impurities
with unfilled 3d or 4f shells and long-term relaxation times of conduction
electrons and mag-netic ions upon the degree of spin polarization. In case
of spatially inhomogene-ous stationary states, the distribution of band
electrons is shown to oscillate in space, with a transition to spatially
homogeneous distribution for infinitely thick sample. It is also demonstrated
that the maximum spin polarization degree he
for the band electrons can be reached for the thickness of semiconductor
film com-parable to the diffusion length for the minority carriers.
Keywords: optical excitation, spin polarization,
spintronics, diluted magnetic semi-conductors
PACS: 72.25.Fe, 72.25.Rb, 72.25.-b, 78.20.Bh,
78.40.Fy
UDC: 535.568
Ukr. J. Phys. Opt.
9 60-71 doi: 10.3116/16091833/9/1/60/2008
Received: 18.12.2007
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