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Luminescence in semiconductor-ferroelectric Sn2P2Se6 crystals
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Dmitruk I., Padlyak B., Grabar O., Vysochanskii Yu. and Vlokh R.

Keywords: Sn2P2Se6 crystals, semiconductors, photoluminescence, electron-hole recombination

PACS: 78.55-m, 78.66.Li, 71.35-y, 77.80-e, 64.70.Rh.

Ukr. J. Phys. Opt. 8 228-234                   doi: 10.3116/16091833/8/4/228/2007
Received: 10.11.2007

Luminescence spectra of Sn2P2Se6 crystals are investigated in the temperature range of 8 – 67K. On the basis of analysis of the obtained data we show that the broad emission band with the maximum at about 600 nm (for the temperature T=8.6 K) can be assigned to the band-to-band electron-hole recombination, whereas the broad emission bands peaked near 785 nm (T=8.6 K) and 1025 nm (T=44K) can be assigned to electron-hole recombination from the levels of defects, which are localized within the bandgap. Based on the referenced data, possible types of the recombination defect centres in Sn2P2Se6 crystals are discussed.
 

 
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