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Raman spectra and
optical properties of thin As40S60 and As40S50Se10
films
1Rubish V.M., 2Stefanovich
V.O., 1Guranich O.G., 1Rubish V.V., 3Kostiukevych
S.A., 1Kryuchyn A.A.
1Uzhgorod
Scientific-Technological Centre of the Institute for Information Recording
of NASU, 4 Zamkovi Skhody St., 88000 Uzhgorod, Ukraine
2Uzhgorod
National University, 54 Voloshin St., 88000 Uzhgorod, Ukraine
3Institute
of Physics of Semiconductors, NAS of Ukraine, 41 Nauka Ave., 03028 Kiev,
Ukraine
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Structure and optical properties of As40S60 and As40S50Se10 glasses
and thin films have been studied using the Raman spectroscopy. The structure
of the films is suggested to be basically formed by triangular AsS3 and
AsSe3 pyramids linked by two-fold coordinated sulphur or selenium atoms.
A considerable amount of structural units with homopolar As-As and S(Se)-S(Se)
bonds has been found in the matrix of investigated compounds. The influence
of illumination and annealing on the structure and optical properties of
As40S60 and As40S50Se10 films has been studied. It has been shown that
the mentioned actions lead to polymerization of molecular As4S(Se)4 groups
and S(Se)n chains in the film matrix and formation of structural units
with heteropolar As-S and As-Se bonds. This is accompanied by the absorption
edge shift towards the long-wavelength region and the increase in the refractive
index.
Keywords: optical Raman spectroscopy, thin
films, transmission spectra, photostructural changes, optical recording
PACS: 73.61.Jc; 78.20.-e
Ukr. J. Phys. Opt.
8 69-77 doi: 10.3116/16091833/8/2/69/2007
Received: 28.12.2006
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REFERENCES
1. Kostyukevich S O, Indutnyj I Z and Shepeljavi P E, 1999. Laser record
of relief microstructures on As40S40Se20 layers. Data recording, Storage
& Processing, 1: 19–24.
2. Stronski A V, Vlcek M, Sklenar A, Shepeljavi P E, Kostyukevich S
O and Wagner T, 2000. Application of As40S60-xSex layers for high-efficiency
grating production. J. Non-Cryst. Solids. 266-269: 973–978.
doi:10.1016/S0022-3093(00)00032-6
http://dx.doi.org/10.1016/S0022-3093(00)00032-6
3. Teteris J and Reinfelde M, 2003. Application of amorphous chalcogenide
semiconductor thin films in optical recording technologies. J. Optoelectron.
and Adv. Mat. 5: 1355–1360.
4. Kostyukevich S O, Indutnyj I Z, Sopinskyj N V and Shepeljavi P E,
2002. Ageing processes research of inorganic resists on As-S-Se basis.
Data recording, Storage & Processing. 4: 3–8.
5. Lucovsky G, Martin R M, 1972. A molecular model for the vibrational
modes in chalcogenide glasses. J. Non-Cryst. Solids. 8-10: 185–190.
doi:10.1016/0022-3093(72)90134-2
http://dx.doi.org/10.1016/0022-3093(72)90134-2
6. Brodsky M. Amorphous semiconductors. Moscow: Mir (1982).
7. Rubish V.M., Kutsenko Ya.P., Poltavtsev O.Yu., Turjanitsa S.I.,
Michalyev N.I. and Popov A.I., 1993. Local structure of chalcogenide and
oxide glassy alloys on the basis of three-halves compounds of arsenic and
antimony. Proc. Moscow Energy Inst. 667: 31–45.
8. Schottmiller J, Tabak M, Lucovsky G and Ward A, 1970. The effect
of valency on transport properties in vitreous binary alloys of selenium.
J. Non-Cryst. Solids. 4: 80–96.
doi:10.1016/0022-3093(70)90024-4
http://dx.doi.org/10.1016/0022-3093(70)90024-4
9. Feltz A. Amorphous and vitreous inorganic solid state. Moscow: Mir
(1986).
10. Ewen P.S., Sik M.J. and Owen A. E., 1977. The Raman spectra and
structure of glasses in the As-Se systems. In: The Non-Crystalline Materials.
London: Taylor and Francis: 231–234.
11. Cardinal T, Richardson KA, Shim H, Schutte A, Beatty R, Le Foulgoc
K, Meneghihi C, Viens JF and Villeneuve A, 1999. Non-linear optical properties
of chalcogenide glasses in the system As-S-Se. J. Non-Cryst. Solids. 256:
353–360.
doi:10.1016/S0022-3093(99)00524-4
http://dx.doi.org/10.1016/S0022-3093(99)00524-4
12. Vlcek M, Stronski AV, Sklenar A, Wagner T and Kasap SO, 2000. Structure
and properties As40S60-xSex glasses. J. Non-Cryst. Solids. 266-269: 964–968.
doi:10.1016/S0022-3093(00)00038-7
http://dx.doi.org/10.1016/S0022-3093(00)00038-7
13. Rubish V.M., Moskalenko N.L., Stefanovych V.O., Shtets P.P., Kostyukevich
S.O., Semak D.G., Shpak I.I., Savchenko N.D. and Rubish V.M., Photo-and
thermal stimulation transformations in As-S-Se system thin films. Materials
of International Scientific-Practical Conf. “Structural Relaxation in Solids”,
Vinnytsia, Ukraine (2003) p.135–136.
14. Gerorgiev DG, Boolchand P and Jackson KA, 2003. Intrinsic nanoscale
phase separation of bulk As2S3 glass. Phil. Mag. 83: 2941–2953.
doi:10.1080/1478643031000151196
http://dx.doi.org/10.1080/1478643031000151196
15. Rubish VV, Rubish VM, Leonov DS, Tarnaj AA and Kyrylenko VK, 2004.
Structure and structural transformation peculiarities in chacogenide glassy
semiconductors. Nanosystems, Nanomaterials, Nanotechnologies. 2: 417–440.
16. Mikla V.I., Rubish V.M., Zabedovsky V.A., Semak D.G., Shtets P.P.,
Yurkin I.M., Fedelesh V.I. and Turjanitsa I.D. Vitreous chalcogenide materials
for optical information recording. Proc. Internat. Conf. "Daylighting 90",
Moscow (1990) p.1–7.
17. Guranych OG, Rubish VV, Hadmashy ZP, Horvat YuA, Durkot MO, Pavlyshynets
TV, Mykulanynets-Meshko OS., Pisak RP and Shtets PP, 2004. Diagrams “property
composition” and structure of As2S3-As2Se3 system glasses. Nauk. Visnyk
Uzhgorod. Univ., Ser. Fiz. 15: 170–174.
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