Ukrainian Journal of Physical Optics 

Number  2, Volume 6,  2005

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Radiation Anisotropy and Ordering Effects Inherent to Quantum Dots and Wires in (In,Ga)As/GaAs Nanostructures
1Strelchuk V.V., 1Lytvyn P.M., 1Kolomys A.F., 1Lysytsya M.P., 1Valakh M.Ya., 2Mazur Yu.I., 2Wang Z.M., 2Salamo G.J.

1V.Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine, 
2Department of Physics, University of Arkansas, Fayetteville, Arkansas, 72701

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Atomic force microscopy and polarised luminescence is used for studying interrelations between the surface morphology and the optical properties of multilayer (In,Ga)As/GaAs(100) nanostructures grown with molecular-beam epitaxy technique, which possess self-organised quantum dots and quantum wires. With increasing number of periods in the structure, aligning of the quantum dots in rows parallel to the crystal direction   is observed. The improvement of lateral ordering correlates with increasing radiation anisotropy of the structure. A possible ordering mechanism is discussed.

Key words: quantum dot, quantum wire, polarization photoluminescence, AFM.

PACS: 61.10.Kw, 68.37.Ps, 68.49.Uv, 68.65.Ac, 68.66.Hb, 78.30.Fs, 78.55.Cr

doi 10.3116/16091833/6/2/78/2005
 
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