Ukrainian Journal of Physical Optics 


Number  2, Volume 6,  2005

Radiation Anisotropy and Ordering Effects Inherent to Quantum Dots and Wires in (In,Ga)As/GaAs Nanostructures (download full version /5260kb/)

V.V.Strelchuk, P.M.Lytvyn, A.F.Kolomys, M.P.Lysytsya, M.Ya.Valakh, Yu.I.Mazur, Z.M.Wang, G.J.Salamo

Atomic force microscopy and polarised luminescence is used for studying interrelations between the surface morphology and the optical properties of multilayer (In,Ga)As/GaAs(100) nanostructures grown with molecular-beam epitaxy technique, which possess self-organised quantum dots and quantum wires. With increasing number of periods in the structure, aligning of the quantum dots in rows parallel to the crystal direction   is observed. The improvement of lateral ordering correlates with increasing radiation anisotropy of the structure. A possible ordering mechanism is discussed.

Key words: quantum dot, quantum wire, polarization photoluminescence, AFM.

PACS: 61.10.Kw, 68.37.Ps, 68.49.Uv, 68.65.Ac, 68.66.Hb, 78.30.Fs, 78.55.Cr

doi 10.3116/16091833/6/2/78/2005

1. Tersoff J, Teichert C, Lagally MG, 1996. Phys. Rev. Lett. 76: 1675.
        doi:10.1103/PhysRevLett.76.1675   http://dx.doi.org/10.1103/PhysRevLett.76.1675
2. Xie Q, Madhukar A, Chen P, Kobayashi N, 1995. Phys. Rev. Lett. 75: 2542.
        doi:10.1103/PhysRevLett.75.2542   http://dx.doi.org/10.1103/PhysRevLett.75.2542
3. Holy V. Springholz G, Pinczolits M, Bauer G, 1999. Phys. Rev. Lett. 83: 356.
        doi:10.1103/PhysRevLett.83.356   http://dx.doi.org/10.1103/PhysRevLett.83.356
4. Quek SS, Liu GR, 2003. Nanotechnology 14: 752.
        doi:10.1088/0957-4484/14/7/311   http://dx.doi.org/10.1088/0957-4484/14/7/311
5. Wang X-D, Liu N, Shih CK, Govindaraju S, Holmes AL, 2004. Appl. Phys. Lett. 85: 1356.
        doi:10.1063/1.1784526   http://dx.doi.org/10.1063/1.1784526
6. Springholtz G, Holy V, Pinczolits M, Bauer G, 1998. Science 282: 734.
        doi:10.1126/science.282.5389.734   http://dx.doi.org/10.1126/science.282.5389.734
7. Meixner M, Schöll E, Schmidbauer M, Raidt H, Köhler R, 2001. Phys. Rev. B 64: 245307.
        doi:10.1103/PhysRevB.64.245307   http://dx.doi.org/10.1103/PhysRevB.64.245307
8. Zhang K, Heyn Ch, Hansen W, Schmidt Th, Falta J, 2000. Appl. Phys. Lett. 76: 2229.
        doi:10.1063/1.126305   http://dx.doi.org/10.1063/1.126305
9. Wang ZhM, Holmes K, Mazur YuI, Salamo GJ, 2004. Appl. Phys. Lett. 84: 1931.
10. Mano T, Nötzel R, Hamhuis GJ, Eijkemans TJ, Wolter JH, 2004. J. Appl. Phys. 85: 109.
        doi:10.1063/1.1631069   http://dx.doi.org/10.1063/1.1631069
11. Saito H, Nishi K, Sugou S, Sugimoto Y, 1997. Appl. Phys. Lett. 71: 590.
        doi:10.1063/1.119802   http://dx.doi.org/10.1063/1.119802


Home | Instructions to Authors | Editorial Board | Meetings & Exhibitions