Ukrainian Journal of Physical Optics 

Krupych O., Smaga I., Vlokh R.

In this paper the optical polarimetric method for determination of inhomogeneous 2D stress distribution in semiconductor samples is presented. The infrared imaging polarimeter is tested on the example of As2Se3 semiconductor glass possessing the induced inhomogeneous stresses. The reconstructed distribution of the shear stress tensor component s6 and the difference (s1-s2) of the principal tensor components are in a satisfactory agreement with those predicted theoretically.

Key words: infrared, imaging polarimetry, semiconductors, mechanical stress.
PACS: 42.30.-d, 42.25.Lc, 07.57.-c, 42.70.Nq

doi 10.3116/16091833/4/4/187/2003

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