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Optical properties of SnO2-As2Se3-ZnS(Mn, Cu)-Al structure
with intermediate chalcogenide-glass layer
Mateleshko N., Mitsa V., Sikora S.
Department of Solid State Electronics, Uzhgorod State
University, 32 Voloshin Str., 88000 Uzhgorod, Ukraine
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Introducing of As2Se3 as a contrasting intermediate layer into SnO2-As2Se3-ZnS(Mn,
Cu)-Al structure allows one to increase 1.5 times the light contrast range
of the device that facilitates the perception of symbol-alphabetic information.
The bleaching of As2Se3 film under the action of moisture allows to control
the state of the structure air-tightness. The absorption edge of As-Se
film and the electrooptical characteristics of SnO2-ZnS(Mn, Cu)-Al active
structure are investigated.
Key words: Electroluminescence, ZnS powder, thin film, chalcogenide
glasses
PACS: 78.40.-q, 78.60.Fi
doi 10.3116/16091833/4/3/135/2003 |
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