Ukrainian Journal of Physical Optics

Number 2, Volume 3, 2002

Temperature Behavior of Exciton Absorption Bands in PbI₂ Layer Crystals
Kramar V., Kramar N., Nitsowich B.

Dept. of Optics and Spectroscopy, Chernivtsi National University, 2, Kotsyubynsky Str., Chernivtsi, 58012, Ukraine

The influence of bending waves on the warm-up behavior of exciton absorption bands in layer crystals has been investigated. The effective mass of the current carriers in the layer semiconductor PbJ2 has been computed and used to obtain the values of the exciton-phonon interaction function by pseudopotential method energy spectra calculations. It was shown that the different signs of the warm-up dynamics of an exciton absorption peak shift and existence of inversion points is related with the concurrent influence of two exciton energy relaxation mechanisms – on both the bending waves and the lattice phonons.

Keywords: layer crystal, lead iodide, exciton

PACS: 71.3S-y

doi 10.3116/16091833/3/2/97/2002

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