Ukrainian Journal of Physical Optics

Number 2, Volume 2, June 2001

Raman study of gallium selenide single crystal oxidation
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O.A. Balitskii, V.P. Savchyn, J.M. Stakhira, V.O. Yuchymchuk

The Raman investigations on thermally oxidized gallium selenide were conducted. It was established that the oxidation of the GaSe involves the formation of a-modification of Ga₂Se₃ at the temperature up to 450 °C. The Ga-(O)₂ complexes are also detected at this temperature but the formation of crystalline gallium oxide takes place at the temperature of 800°C

Key words: III-VI compound, Raman scattering, phase transformations

doi 10.3116/16091833/2/2/81/2001

1. Singh NB, Suhre DR, Balakrisha V, Marable M, Fernelius N, Hopkins FK and Zelmon D, 1998. Progr. Cryst. Growth Charact. Mater. 37: 47-102.
        doi:10.1016/S0960-8974(98)00013-8 http://dx.doi.org/10.1016/S0960-8974(98)00013-8
2. Savchyn VP and Kytsai VB, 2000. Thin Solid Films 361-362: 123-125.
        doi:10.1016/S0040-6090(99)00796-8 http://dx.doi.org/10.1016/S0040-6090(99)00796-8
3. Stakhira J, Savchyn V and Kytsay V, 1999. Molec. Phys. Rep. 23: 184-186.
4. Berchenko NN, Balitskii OA, Lutsiv RV, Savchyn VP and Vasyltsiv VI, 1997. Mater. Chem. Phys. 51: 125-129.
        doi:10.1016/S0254-0584(97)80280-5 http://dx.doi.org/10.1016/S0254-0584(97)80280-5
5. Savchyn VP and Stakhira JM, 1996. Phys. Status Solidi (a) 156: 113-118.
6. Iwakuro H, Tatsuyama C and Ichimura S, 1982. Jpn. J. Appl. Phys. 21: 94-99.
        doi:10.1143/JJAP.21.94 http://dx.doi.org/10.1143/JJAP.21.94
7. Kong LB, Zhu W and Tan OK, 2000. Mater. Lett. 42: 232-239.
        doi:10.1016/S0167-577X(99)00190-1 http://dx.doi.org/10.1016/S0167-577X(99)00190-1
8. Thurmond CD, Shwartz GP, Kammlott GW and Shwartz BJ, 1980. Electrochem. Soc. 127: 1366-1371.
        doi:10.1149/1.2129900 http://dx.doi.org/10.1149/1.2129900
9. Aleshenko YuA, Berchenko NN, Vinnikova AI, Vodopyanov LK, Matveenko AV, Medvedev YuV and Tretyakova EA, 1989. Sov. Phys. Tech. Lett. 15: 17-20.
10. Kuroda N, Ueno O and Nishina Y, 1987. Phys. Rev. B35: 3860-3870.
11. Kojima N, Yamada A, Takahashi K, Okamoto T, Konagai M and Saito K, 1993. Jpn. J. Appl. Phys. 32: L887-L889.
        doi:10.1143/JJAP.32.L887 http://dx.doi.org/10.1143/JJAP.32.L887
12. Ohmura K, Aoki N and Snakayama T, 2000. J. Phys. Soc. Jpn. 69: 3860-3863.
        doi:10.1143/JPSJ.69.3860 http://dx.doi.org/10.1143/JPSJ.69.3860
13. Chen P, Zhang R, Xu XF, Zhou YG, Chen ZZ, Xie SY, Li WP and Zheng YD, 2000. Appl. Phys. A71: 191-194.
14. Dohy D and Lucazeau G, 1982. J. Molec. Struct. 79: 419-422.
        doi:10.1016/0022-2860(82)85094-1 http://dx.doi.org/10.1016/0022-2860(82)85094-1
15. Dohy D, Lucazeau G and Revcolevschi A, 1982. J. Sol. State Chem. 45: 180-192.
        doi:10.1016/0022-4596(82)90274-2 http://dx.doi.org/10.1016/0022-4596(82)90274-2

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