Ukrainian Journal of Physical Optics 

O.A. Balitskii, V.P. Savchyn, J.M. Stakhira, V.O. Yuchymchuk

The Raman investigations on thermally oxidized gallium selenide were conducted. It was established that the oxidation of the GaSe involves the formation of a-modification of Ga₂Se₃ at the temperature up to 450 °C. The Ga-(O)₂ complexes are also detected at this temperature but the formation of crystalline gallium oxide takes place at the temperature of 800°C

Key words: III-VI compound, Raman scattering, phase transformations

doi 10.3116/16091833/2/2/81/2001

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